AOT8N65
Производится
Увеличить
Краткое описание:
N-CH Power MOSFET 650V 8A TO-220 Through Hole
Дополнительная информация
N-channel enhancement mode power MOSFET featuring 650V drain-source voltage and 8A continuous drain current. This single-element transistor is housed in a 3-pin TO-220 package with a tab, designed for through-hole mounting. Key specifications include a maximum drain-source resistance of 1150 mOhm at 10V and a typical gate charge of 23.5 nC at 10V. Maximum power dissipation is 208W, with an operating temperature range of -55°C to 150°C.
| PCB | 3 |
| Tab | Tab |
| ECCN | EAR99 |
| EU RoHS | Yes with Exemption |
| Category | Power MOSFET |
| HTS Code | 8541290095 |
| Mounting | Through Hole |
| Cage Code | 6USE7 |
| Pin Count | 3 |
| Schedule B | 8541290080 |
| Channel Mode | Enhancement |
| Channel Type | N |
| Package/Case | TO-220 |
| Configuration | Single |
| RoHS Versions | 2011/65/EU, 2015/863 |
| Pin Pitch (mm) | 2.54 |
| Package Material | Plastic |
| Package Width (mm) | 4.45 |
| Package Description | Transistor Outline Package |
| Package Height (mm) | 9.14 |
| Package Length (mm) | 10.03 |
| Radiation Hardening | No |
| Seated Plane Height (mm) | 19.7(Max) |
| Max Operating Temperature | 150°C |
| Maximum Power Dissipation | 208000mW |
| Min Operating Temperature | -55°C |
| Typical Gate Charge @ 10V | 23.5nC |
| Typical Gate Charge @ Vgs | 23.5@10VnC |
| Maximum Gate Source Voltage | ±30V |
| Number of Elements per Chip | 1 |
| Maximum Drain Source Voltage | 650V |
| Maximum Drain Source Resistance | 1150@10VmOhm |
| Typical Input Capacitance @ Vds | 1165@25VpF |
| Maximum Continuous Drain Current | 8A |
Если у вас не открывается документ, нажмите, чтобы открыть файл в новой вкладке.
