AOTF10N65
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Краткое описание:
650V 10A N-CH Power MOSFET TO-220F
Дополнительная информация
N-channel enhancement mode power MOSFET featuring a 650V drain-source voltage and 10A continuous drain current. This single-element transistor is housed in a TO-220F package with a 3-pin through-hole configuration and a tab. Key electrical characteristics include a maximum drain-source resistance of 1000 mOhm at 10V, typical gate charge of 27.7 nC at 10V, and typical input capacitance of 1369 pF at 25V. Maximum power dissipation is 50W, with an operating temperature range from -55°C to 150°C.
| PCB | 3 |
| Tab | Tab |
| ECCN | EAR99 |
| EU RoHS | Yes with Exemption |
| Category | Power MOSFET |
| HTS Code | 8541290095 |
| Mounting | Through Hole |
| Cage Code | 6USE7 |
| Pin Count | 3 |
| Lead Shape | Through Hole |
| Schedule B | 8541290080 |
| Channel Mode | Enhancement |
| Channel Type | N |
| Package/Case | TO-220F |
| Configuration | Single |
| RoHS Versions | 2011/65/EU, 2015/863 |
| Pin Pitch (mm) | 2.54 |
| Package Material | Plastic |
| Basic Package Type | Through Hole |
| Package Width (mm) | 4.7 |
| Package Description | Transistor Outline Package Fullpak |
| Package Family Name | TO-220 |
| Package Height (mm) | 15.87 |
| Package Length (mm) | 10.16 |
| Radiation Hardening | No |
| Seated Plane Height (mm) | 19.1 |
| Max Operating Temperature | 150°C |
| Maximum Power Dissipation | 50000mW |
| Min Operating Temperature | -55°C |
| Typical Gate Charge @ 10V | 27.7nC |
| Typical Gate Charge @ Vgs | 27.7@10VnC |
| Maximum Gate Source Voltage | ±30V |
| Number of Elements per Chip | 1 |
| Maximum Drain Source Voltage | 650V |
| Maximum Drain Source Resistance | 1000@10VmOhm |
| Typical Input Capacitance @ Vds | 1369@25VpF |
| Maximum Continuous Drain Current | 10A |
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