AOTF8N80L
Производится
Увеличить
Краткое описание:
800V N-CH Power MOSFET, 7.4A, TO-220F
Дополнительная информация
N-channel enhancement mode power MOSFET featuring 800V drain-source voltage and 7.4A continuous drain current. This single-element transistor is housed in a TO-220F package with a through-hole mounting style and 3 pins. Key specifications include a maximum gate-source voltage of ±30V, a typical gate charge of 26nC at 10V, and a maximum power dissipation of 50W. The TO-220F package measures 10.16mm x 4.7mm x 15.87mm with a 2.54mm pin pitch.
| PCB | 3 |
| Tab | Tab |
| ECCN | EAR99 |
| EU RoHS | Yes with Exemption |
| Category | Power MOSFET |
| HTS Code | 8541290095 |
| Mounting | Through Hole |
| Cage Code | 6USE7 |
| Pin Count | 3 |
| Lead Shape | Through Hole |
| Schedule B | 8541290080 |
| Channel Mode | Enhancement |
| Channel Type | N |
| Package/Case | TO-220F |
| Configuration | Single |
| RoHS Versions | 2011/65/EU, 2015/863 |
| Pin Pitch (mm) | 2.54 |
| Package Material | Plastic |
| Basic Package Type | Through Hole |
| Package Width (mm) | 4.7 |
| Package Description | Transistor Outline Package Fullpak |
| Package Family Name | TO-220 |
| Package Height (mm) | 15.87 |
| Package Length (mm) | 10.16 |
| Max Operating Temperature | 150°C |
| Maximum Power Dissipation | 50000mW |
| Min Operating Temperature | -55°C |
| Typical Gate Charge @ 10V | 26nC |
| Typical Gate Charge @ Vgs | 26@10VnC |
| Maximum Gate Source Voltage | ±30V |
| Number of Elements per Chip | 1 |
| Maximum Drain Source Voltage | 800V |
| Maximum Gate Threshold Voltage | 4.5V |
| Maximum Drain Source Resistance | 1630@10VmOhm |
| Typical Input Capacitance @ Vds | 1375@25VpF |
| Maximum Continuous Drain Current | 7.4A |
Если у вас не открывается документ, нажмите, чтобы открыть файл в новой вкладке.
