AP9479GM
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Краткое описание:
N-CH MOSFET 60V 5.6A SOIC 8-Pin
Дополнительная информация
N-channel enhancement mode power MOSFET featuring a 60V drain-source voltage and 5.6A continuous drain current. This surface-mount component utilizes an 8-pin SOIC package (SO, SOP family, MS-012AA) with gull-wing leads, measuring 5.05mm x 3.9mm x 1.4mm. Key electrical characteristics include a maximum drain-source on-resistance of 45mOhm at 10V, typical gate charge of 11nC at 4.5V, and typical input capacitance of 960pF at 25V. The device offers a maximum power dissipation of 2500mW and operates across a temperature range of -55°C to 150°C.
| PCB | 8 |
| ECCN | EAR99 |
| Jedec | MS-012AA |
| EU RoHS | Yes |
| Category | Power MOSFET |
| HTS Code | 8541290095 |
| Mounting | Surface Mount |
| Pin Count | 8 |
| Lead Shape | Gull-wing |
| Schedule B | 8541290080 |
| Channel Mode | Enhancement |
| Channel Type | N |
| Package/Case | SO |
| Configuration | Single Quad Drain Triple Source |
| RoHS Versions | 2011/65/EU, 2015/863 |
| Pin Pitch (mm) | 1.27 |
| Package Material | Plastic |
| Basic Package Type | Lead-Frame SMT |
| Package Width (mm) | 3.9 |
| Package Description | Small Outline IC |
| Package Family Name | SOP |
| Package Height (mm) | 1.4 |
| Package Length (mm) | 5.05 |
| Radiation Hardening | No |
| Seated Plane Height (mm) | 1.55 |
| Max Operating Temperature | 150°C |
| Maximum Power Dissipation | 2500mW |
| Min Operating Temperature | -55°C |
| Typical Gate Charge @ Vgs | [email protected]nC |
| Maximum Gate Source Voltage | ±25V |
| Number of Elements per Chip | 1 |
| Maximum Drain Source Voltage | 60V |
| Maximum Drain Source Resistance | 45@10VmOhm |
| Typical Input Capacitance @ Vds | 960@25VpF |
| Maximum Continuous Drain Current | 5.6A |
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