APECVA3010P3BT
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Краткое описание:
NPN IR Phototransistor, 2-Pin SMD, 30V, 800uA
Дополнительная информация
Surface mount NPN phototransistor for infrared detection. Features a 2-pin SMD package with dimensions of 3mm x 2mm x 1mm. Operates within a temperature range of -40°C to 85°C, offering a maximum light current of 800µA (typ.) and a maximum collector-emitter voltage of 30V. This IR chip phototransistor has a maximum power dissipation of 100mW and a maximum dark current of 100nA.
| PCB | 2 |
| ECCN | EAR99 |
| PPAP | No |
| Type | IR Chip |
| EU RoHS | Yes |
| HTS Code | 8541407080 |
| Mounting | Surface Mount |
| Polarity | NPN |
| Cage Code | 09MQ5 |
| Pin Count | 2 |
| Automotive | No |
| Schedule B | 8541407080 |
| Package/Case | SMD |
| AEC Qualified | No |
| RoHS Versions | 2011/65/EU, 2015/863 |
| Lens Shape Type | Flat |
| Maximum Fall Time | 15000(Typ)ns |
| Maximum Rise Time | 15000(Typ)ns |
| Package Width (mm) | 2 |
| Package Description | Surface Mount Device |
| Package Height (mm) | 1 |
| Package Length (mm) | 3 |
| Radiation Hardening | No |
| Viewing Orientation | Top View |
| Maximum Dark Current | 100nA |
| Phototransistor Type | Phototransistor |
| Maximum Light Current | 800(Typ)uA |
| Fabrication Technology | NPN Transistor |
| Max Operating Temperature | 85°C |
| Maximum Power Dissipation | 100mW |
| Min Operating Temperature | -40°C |
| Number of Channels per Chip | 1 |
| Maximum Collector-Emitter Voltage | 30V |
| Maximum Emitter-Collector Voltage | 5V |
| Maximum Collector-Emitter Saturation Voltage | 0.8V |
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