APT1003RSFLLG
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Краткое описание:
1000V 4A N-CH Power MOSFET, D3PAK, TO-268
Дополнительная информация
N-channel enhancement mode power MOSFET in a D3PAK (TO-268AA) surface-mount package. Features a 1000V drain-source voltage, 4A continuous drain current, and 3000 mOhm maximum drain-source resistance. This single-element transistor offers a typical gate charge of 34 nC and input capacitance of 694 pF. Maximum power dissipation is 139W, with an operating temperature range of -55°C to 150°C.
| PCB | 2 |
| Tab | Tab |
| ECCN | EAR99 |
| PPAP | No |
| Jedec | TO-268AA |
| EU RoHS | Yes |
| Category | Power MOSFET |
| HTS Code | 8541290095 |
| Mounting | Surface Mount |
| Cage Code | 60991 |
| Pin Count | 3 |
| Automotive | No |
| Lead Shape | Gull-wing |
| Schedule B | 8541290080 |
| Channel Mode | Enhancement |
| Channel Type | N |
| Package/Case | D3PAK |
| AEC Qualified | No |
| Configuration | Single |
| RoHS Versions | 2011/65/EU |
| Pin Pitch (mm) | 5.45 |
| Package Material | Plastic |
| Basic Package Type | Lead-Frame SMT |
| Package Width (mm) | 13.99(Max) |
| Package Description | Transistor Outline Package Fullpak |
| Package Family Name | TO-268 |
| Package Height (mm) | 5.08(Max) |
| Package Length (mm) | 16.05(Max) |
| Radiation Hardening | No |
| Seated Plane Height (mm) | 5.26(Max) |
| Max Operating Temperature | 150°C |
| Maximum Power Dissipation | 139000mW |
| Min Operating Temperature | -55°C |
| Typical Gate Charge @ 10V | 34nC |
| Typical Gate Charge @ Vgs | 34@10VnC |
| Maximum Gate Source Voltage | ±30V |
| Number of Elements per Chip | 1 |
| Maximum Drain Source Voltage | 1000V |
| Maximum Drain Source Resistance | 3000@10VmOhm |
| Typical Input Capacitance @ Vds | 694@25VpF |
| Maximum Continuous Drain Current | 4A |
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