APT2012P3BT
Производится
Увеличить
Краткое описание:
IR Phototransistor NPN 940nm SMT 2-Pin
Дополнительная информация
Surface Mount NPN phototransistor for infrared detection, featuring a 940nm peak wavelength and a 2-pin SMT package. This IR chip phototransistor offers a maximum emitter-collector voltage of 5V and a maximum collector-emitter voltage of 30V, with a maximum dark current of 100 nA. Operating across a temperature range of -40°C to 85°C, it boasts a maximum light current of 1000µA (typ) and a maximum power dissipation of 100mW. The compact SMD package measures 2mm x 1.25mm x 0.75mm, designed for top-view viewing orientation.
| PCB | 2 |
| ECCN | EAR99 |
| PPAP | No |
| Type | IR Chip |
| EU RoHS | Yes |
| HTS Code | 8541402000 |
| Mounting | Surface Mount |
| Polarity | NPN |
| Cage Code | 09MQ5 |
| Pin Count | 2 |
| Automotive | No |
| Lens Color | Blue Transparent |
| Schedule B | 8541402000 |
| Package/Case | SMT |
| AEC Qualified | No |
| RoHS Versions | 2011/65/EU, 2015/863 |
| Lens Shape Type | Flat |
| Peak Wavelength | 940nm |
| Maximum Fall Time | 15000(Typ)ns |
| Maximum Rise Time | 15000(Typ)ns |
| Package Width (mm) | 1.25 |
| Package Description | Surface Mount Device |
| Package Family Name | SMD |
| Package Height (mm) | 0.75 |
| Package Length (mm) | 2 |
| Radiation Hardening | No |
| Viewing Orientation | Top View |
| Maximum Dark Current | 100nA |
| Phototransistor Type | Phototransistor |
| Maximum Light Current | 1000(Typ)uA |
| Fabrication Technology | NPN Transistor |
| Max Operating Temperature | 85°C |
| Maximum Power Dissipation | 100mW |
| Min Operating Temperature | -40°C |
| Number of Channels per Chip | 1 |
| Maximum Collector-Emitter Voltage | 30V |
| Maximum Emitter-Collector Voltage | 5V |
| Maximum Collector-Emitter Saturation Voltage | 0.8V |
Если у вас не открывается документ, нажмите, чтобы открыть файл в новой вкладке.
