APT30F50B
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Краткое описание:
500V 30A N-Channel MOSFET, 190mR Rds(on), TO-247
Дополнительная информация
N-Channel Power MOSFET, featuring a 500V drain-source voltage and 30A continuous drain current. This silicon Metal-oxide Semiconductor FET offers a low 0.19ohm drain-source resistance and a maximum power dissipation of 415W. Designed for through-hole mounting in a TO-247-3 package, it operates from -55°C to 150°C and is RoHS compliant. Key switching characteristics include a 20ns turn-on delay and 17ns fall time.
| RoHS | Compliant |
| Mount | Through Hole |
| Width | 16.26mm |
| Height | 5.31mm |
| Length | 21.46mm |
| Series | POWER MOS 8™ |
| Weight | 1.340411oz |
| Polarity | N-CHANNEL |
| Fall Time | 17ns |
| Lead Free | Lead Free |
| Packaging | Rail/Tube |
| Rds On Max | 190mR |
| Package/Case | TO-247-3 |
| Current Rating | 30A |
| RoHS Compliant | Yes |
| DC Rated Voltage | 500V |
| Package Quantity | 1 |
| Input Capacitance | 4.525nF |
| Power Dissipation | 415W |
| Number of Elements | 1 |
| Turn-On Delay Time | 20ns |
| Radiation Hardening | No |
| Turn-Off Delay Time | 50ns |
| Max Power Dissipation | 415W |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Drain to Source Resistance | 170mR |
| Gate to Source Voltage (Vgs) | 30V |
| Continuous Drain Current (ID) | 30A |
| Drain to Source Voltage (Vdss) | 500V |
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