APT38N60BC6

APT38N60BC6 - Microsemi
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Краткое описание: 600V 38A N-Channel MOSFET TO-247 99mR RdsOn
Производитель Microsemi

Дополнительная информация

N-Channel Power MOSFET featuring 600V drain-source voltage and 38A continuous drain current. This silicon, metal-oxide semiconductor FET offers a low 99mΩ drain-to-source resistance. Designed for through-hole mounting in a TO-247 package, it boasts a maximum power dissipation of 278W and operates within a temperature range of -55°C to 150°C. Key switching characteristics include a 14ns turn-on delay and a 69ns fall time.
RoHS Not CompliantNo
Mount Through Hole
Width 16.26mm
Height 5.31mm
Length 21.46mm
Series CoolMOS™
Weight 1.340411oz
Polarity N-CHANNEL
Fall Time 69ns
Lead Free Lead Free
Packaging Rail/Tube
Rds On Max 99mR
Package/Case TO-247-3
RoHS Compliant No
Package Quantity 1
Input Capacitance 2.826nF
Power Dissipation 278W
Number of Elements 1
Turn-On Delay Time 14ns
Radiation Hardening No
Turn-Off Delay Time 118ns
Max Power Dissipation 278W
Max Operating Temperature 150°C
Min Operating Temperature -55°C
Drain to Source Resistance 99mR
Gate to Source Voltage (Vgs) 20V
Continuous Drain Current (ID) 38A
Drain to Source Voltage (Vdss) 600V

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