APT56M50L
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Краткое описание:
500V 56A N-Channel MOSFET, 100mR Rds On, TO-264
Дополнительная информация
N-Channel Power MOSFET featuring 500V drain-source voltage and 56A continuous drain current. This silicon Metal-oxide Semiconductor FET offers a low 100mΩ maximum drain-source on-resistance. Designed for through-hole mounting in a TO-264-3 package, it boasts a maximum power dissipation of 780W and operates within a temperature range of -55°C to 150°C. Key switching parameters include a 38ns turn-on delay and 33ns fall time. RoHS compliant.
| RoHS | Compliant |
| Mount | Through Hole |
| Width | 20.5mm |
| Height | 5.21mm |
| Length | 26.49mm |
| Weight | 0.373904oz |
| Polarity | N-CHANNEL |
| Fall Time | 33ns |
| Lead Free | Lead Free |
| Packaging | Rail/Tube |
| Rds On Max | 100mR |
| Package/Case | TO-264-3 |
| Current Rating | 56A |
| RoHS Compliant | Yes |
| DC Rated Voltage | 500V |
| Package Quantity | 46 |
| Input Capacitance | 8.8nF |
| Power Dissipation | 780W |
| Number of Elements | 1 |
| Turn-On Delay Time | 38ns |
| Radiation Hardening | No |
| Turn-Off Delay Time | 100ns |
| Max Power Dissipation | 780W |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Drain to Source Resistance | 85mR |
| Gate to Source Voltage (Vgs) | 30V |
| Continuous Drain Current (ID) | 56A |
| Drain to Source Voltage (Vdss) | 500V |
| Drain-source On Resistance-Max | 100mR |
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