APT94N60L2C3G
Увеличить
Краткое описание:
600V 94A N-Channel MOSFET, 35mR Rds(on), TO-264
Дополнительная информация
N-Channel Power MOSFET, 600V Vdss, 94A continuous drain current, and 35mΩ maximum drain-source on-resistance. This silicon Metal-oxide Semiconductor FET features a TO-264 package with 3 pins, suitable for through-hole mounting. Key specifications include a 13.6nF input capacitance, 8ns fall time, 18ns turn-on delay, and 110ns turn-off delay. Maximum power dissipation is 833W, with operating temperatures ranging from -55°C to 150°C. This RoHS compliant component is lead-free.
| RoHS | Compliant |
| Mount | Through Hole |
| Width | 20.5mm |
| Height | 5.21mm |
| Length | 26.49mm |
| Weight | 0.373904oz |
| Polarity | N-CHANNEL |
| Fall Time | 8ns |
| Lead Free | Lead Free |
| Packaging | Rail/Tube |
| Rds On Max | 35mR |
| Package/Case | TO-264-3 |
| Current Rating | 94A |
| RoHS Compliant | Yes |
| DC Rated Voltage | 600V |
| Package Quantity | 20 |
| Input Capacitance | 13.6nF |
| Turn-On Delay Time | 18ns |
| Radiation Hardening | No |
| Turn-Off Delay Time | 110ns |
| Max Power Dissipation | 833W |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Drain to Source Resistance | 30mR |
| Gate to Source Voltage (Vgs) | 20V |
| Continuous Drain Current (ID) | 94A |
| Drain to Source Voltage (Vdss) | 600V |
| Drain-source On Resistance-Max | 35mR |
Если у вас не открывается документ, нажмите, чтобы открыть файл в новой вкладке.
