AS4C8M16SA-6BINTR
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Краткое описание:
128Mb (8M x 16) SDRAM, 166MHz, 3.3V, 54-ball TFBGA
Дополнительная информация
The AS4C8M16SA-6BINTR is a 128-Mbit high-speed CMOS synchronous DRAM (SDRAM) organized as 4 banks of 2,097,152 words by 16 bits. It uses a pipelined architecture and double-buffered output to achieve high-speed data transfer. All inputs and outputs are synchronized with the rising edge of the system clock. It features programmable burst lengths and CAS latencies, and is designed for industrial temperature applications.
| Msl | 3 |
| RoHS | Compliant |
| Density | 128Mb |
| Pin Count | 54 |
| CAS Latency | 2, 3cycles |
| Halogen Free | Yes |
| Organization | 8M x 16 |
| Supply Voltage | 3.3V |
| Clock Frequency | 166MHz |
| Number of Banks | 4 |
| Operating Temperature | -40 to 85°C |