AT-42036-BLKG
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Краткое описание:
RF NPN Transistor, 8GHz, 12V VCEO, 80mA IC, SMD
Дополнительная информация
NPN RF small signal bipolar transistor for C-band applications. Features 8GHz transition frequency and gain bandwidth product, with a continuous collector current of 80mA. Operates within a temperature range of -65°C to 150°C, with a maximum power dissipation of 600mW. Packaged in a 36 MICRO-X-4 ceramic SMD/SMT package for surface mounting.
| Gain | 13.5dB |
| RoHS | Compliant |
| Mount | Surface Mount |
| Polarity | NPN |
| Frequency | 8GHz |
| Lead Free | Lead Free |
| Packaging | Bulk |
| Package/Case | SMD/SMT |
| Max Frequency | 8GHz |
| Current Rating | 80mA |
| RoHS Compliant | Yes |
| DC Rated Voltage | 12V |
| Package Quantity | 100 |
| Power Dissipation | 600mW |
| Number of Elements | 1 |
| Radiation Hardening | No |
| Transition Frequency | 8GHz |
| Max Collector Current | 80mA |
| Max Power Dissipation | 600mW |
| Gain Bandwidth Product | 8GHz |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -65°C |
| Emitter Base Voltage (VEBO) | 1.5V |
| Continuous Collector Current | 80mA |
| Collector Base Voltage (VCBO) | 20V |
| Collector-emitter Voltage-Max | 12V |
| Collector Emitter Voltage (VCEO) | 12V |
| Collector Emitter Breakdown Voltage | 12V |
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