ATF-34143-BLKG
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Краткое описание:
RF FET, GaAs, N-Ch, 2GHz, 17.5dB Gain, 0.5dB NF, SOT-343
Дополнительная информация
N-Channel RF FET, X-Band, Silicon, 1-Element, Surface Mount Transistor with 17.5dB gain and 0.5dB noise figure. Features 5.5V drain-source voltage, 145mA continuous drain current, and 725mW power dissipation. Operates from 2GHz with a nominal gate-source voltage of -5V. Packaged in a 4-pin SC-70 (SOT-343) with tin, matte contact plating, and RoHS compliance.
| Gain | 17.5dB |
| RoHS | Compliant |
| Mount | Surface Mount |
| Width | 1.35mm |
| Height | 1mm |
| Length | 2.25mm |
| Polarity | N-CHANNEL |
| Frequency | 2GHz |
| Lead Free | Lead Free |
| Packaging | Strip |
| Technology | GAAS |
| Nominal Vgs | -5V |
| Termination | SMD/SMT |
| Noise Figure | 0.5dB |
| Package/Case | SOT-343 |
| Power Supply | 5V |
| Test Voltage | 4V |
| RoHS Compliant | Yes |
| Supply Current | 60mA |
| Voltage Rating | 5.5V |
| Contact Plating | Tin, Matte |
| DC Rated Voltage | 5.5V |
| Package Quantity | 100 |
| Power Dissipation | 725mW |
| Dual Supply Voltage | 5.5V |
| Operating Frequency | 2 GHz |
| Radiation Hardening | No |
| Reach SVHC Compliant | No |
| Max Power Dissipation | 725mW |
| Max Operating Temperature | 160°C |
| Min Operating Temperature | -65°C |
| Gate to Source Voltage (Vgs) | -5V |
| Continuous Drain Current (ID) | 145mA |
| Drain to Source Voltage (Vdss) | 5.5V |
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