ATF-35143-BLKG
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RF FET, 2GHz, 18dB Gain, 0.4dB NF, SOT-343, N-Channel
Дополнительная информация
N-Channel RF Small Signal Field-Effect Transistor for L-Band applications. Features High Electron Mobility FET technology with a 2 GHz operating frequency and 18dB gain. Offers a low noise figure of 0.4dB and a maximum drain current of 80mA. Housed in a 4-pin SC-70 (SOT-343) surface mount package with tin-matte contact plating. Lead-free and RoHS compliant, operating from -65°C to 160°C.
| Gain | 18dB |
| RoHS | Compliant |
| Mount | Surface Mount |
| Width | 1.35mm |
| Height | 1mm |
| Length | 2.25mm |
| Polarity | N-CHANNEL |
| Frequency | 2GHz |
| Lead Free | Lead Free |
| Packaging | Bag |
| Technology | GAAS |
| Noise Figure | 0.4dB |
| Package/Case | SOT-343 |
| Test Voltage | 2V |
| FET Technology | HIGH ELECTRON MOBILITY |
| RoHS Compliant | Yes |
| Supply Current | 15mA |
| Voltage Rating | 5.5V |
| Contact Plating | Tin, Matte |
| DC Rated Voltage | 5.5V |
| Package Quantity | 100 |
| Operating Frequency | 2 GHz |
| Radiation Hardening | No |
| Max Power Dissipation | 300mW |
| Highest Frequency Band | X BAND |
| Max Operating Temperature | 160°C |
| Min Operating Temperature | -65°C |
| Gate to Source Voltage (Vgs) | -5V |
| Continuous Drain Current (ID) | 80mA |
| Drain to Source Voltage (Vdss) | 5.5V |
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