ATF-50189-BLK
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Краткое описание:
RF FET, C Band, 2GHz, 1.1dB NF, 15.5dB Gain, SOT-89
Дополнительная информация
RF Small Signal Field-Effect Transistor, C Band, Silicon, N-Channel, High Electron Mobility FET. Features 2 GHz operating frequency with 15.5dB gain and a 1.1dB noise figure. Supports up to 1A continuous drain current and 7V drain-to-source voltage. Surface mount SOT-89 package with tin, matte contact plating. Operates from -65°C to 150°C with 2.25W power dissipation.
| Gain | 15.5dB |
| RoHS | Compliant |
| Mount | Surface Mount |
| Width | 2.6mm |
| Height | 1.6mm |
| Length | 4.6mm |
| Frequency | 2GHz |
| Lead Free | Lead Free |
| Packaging | Bag |
| Technology | GAAS |
| Nominal Vgs | 380mV |
| Termination | SMD/SMT |
| Noise Figure | 1.1dB |
| Package/Case | SOT-89 |
| Test Voltage | 4.5V |
| FET Technology | HIGH ELECTRON MOBILITY |
| RoHS Compliant | Yes |
| Supply Current | 280mA |
| Contact Plating | Tin, Matte |
| DC Rated Voltage | 4.5V |
| Package Quantity | 100 |
| Power Dissipation | 2.25W |
| Dual Supply Voltage | 4.5V |
| Operating Frequency | 2 GHz |
| Radiation Hardening | No |
| Reach SVHC Compliant | No |
| Max Power Dissipation | 2.25W |
| Highest Frequency Band | C BAND |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -65°C |
| Gate to Source Voltage (Vgs) | 800mV |
| Continuous Drain Current (ID) | 1A |
| Drain to Source Voltage (Vdss) | 7V |
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