ATF-521P8-BLK
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Краткое описание:
RF FET, 2GHz, 17dB Gain, 1.5dB NF, 7V Vdss, 500mA ID, GaAs, LPCC-8
Дополнительная информация
High-performance RF small signal field-effect transistor, N-channel, 1-element, L-band operation up to 2 GHz. Features 7V drain-source voltage, 500mA continuous drain current, and 1.5dB noise figure. Offers 17dB gain with a nominal gate-source voltage of 280mV. Packaged in an 8-lead LPCC (2x2mm) surface-mount package with matte tin plating. Operates across a wide temperature range of -65°C to 150°C.
| Gain | 17dB |
| RoHS | Compliant |
| Mount | Surface Mount |
| Frequency | 2GHz |
| Lead Free | Lead Free |
| Packaging | Bulk |
| Technology | GAAS |
| Nominal Vgs | 280mV |
| Termination | SMD/SMT |
| Noise Figure | 1.5dB |
| Test Voltage | 4.5V |
| RoHS Compliant | Yes |
| Voltage Rating | 7V |
| Contact Plating | Tin, Matte |
| DC Rated Voltage | 4.5V |
| Package Quantity | 100 |
| Power Dissipation | 1.5W |
| Dual Supply Voltage | 4.5V |
| Operating Frequency | 2 GHz |
| Reach SVHC Compliant | No |
| Max Power Dissipation | 1.5W |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -65°C |
| Gate to Source Voltage (Vgs) | 1V |
| Continuous Drain Current (ID) | 500mA |
| Drain to Source Voltage (Vdss) | 7V |
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