ATF-54143-BLKG
Снят с производства
Увеличить
Краткое описание:
GaAs RF FET, C Band, 2GHz, 16.6dB, 0.5dB NF, SOT-343
Дополнительная информация
Surface mount N-channel Gallium Arsenide High Electron Mobility FET for C-band operation up to 2 GHz. Features a 0.5dB noise figure, 16.6dB gain, and 5V drain-to-source voltage. This RoHS compliant transistor operates with a 3V power supply, offering 120mA continuous drain current and 725mW power dissipation. Packaged in a 4-pin SC-70 (SOT-343) plastic housing.
| Gain | 16.6dB |
| RoHS | Compliant |
| Mount | Surface Mount |
| Width | 1.35mm |
| Height | 1mm |
| Length | 2.25mm |
| Polarity | N-CHANNEL |
| Frequency | 2GHz |
| Lead Free | Lead Free |
| Packaging | Strip |
| Technology | GAAS |
| Noise Figure | 0.5dB |
| Package/Case | SOT-343 |
| Power Supply | 3V |
| Test Voltage | 3V |
| FET Technology | HIGH ELECTRON MOBILITY |
| RoHS Compliant | Yes |
| Supply Current | 60mA |
| Voltage Rating | 5V |
| DC Rated Voltage | 3V |
| Package Quantity | 100 |
| Power Dissipation | 725mW |
| Operating Frequency | 2 GHz |
| Radiation Hardening | No |
| Reach SVHC Compliant | No |
| Max Power Dissipation | 725mW |
| Highest Frequency Band | C BAND |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -65°C |
| Gate to Source Voltage (Vgs) | 1V |
| Continuous Drain Current (ID) | 120mA |
| Drain to Source Voltage (Vdss) | 5V |
Если у вас не открывается документ, нажмите, чтобы открыть файл в новой вкладке.
