ATF-54143-TR1G
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GaAs RF FET, 2GHz, 16.6dB Gain, 0.5dB NF, 5V Vdss, SOT-343
Дополнительная информация
Surface mount RF small signal field-effect transistor featuring N-channel, Gallium Arsenide (GaAs) technology for C-band operation. This 4-pin SC-70 packaged device offers a 2 GHz operating frequency, 16.6 dB gain, and a low 0.5 dB noise figure. It supports a continuous drain current of 120mA and a drain-to-source voltage of 5V, with a maximum power dissipation of 725mW. Operating across a wide temperature range from -65°C to 150°C, this RoHS compliant component is supplied on tape and reel.
| Gain | 16.6dB |
| RoHS | Compliant |
| Mount | Surface Mount |
| Polarity | N-CHANNEL |
| Frequency | 2GHz |
| Lead Free | Lead Free |
| Packaging | Tape and Reel |
| Technology | GAAS |
| Noise Figure | 0.5dB |
| Package/Case | SOT-343 |
| Test Voltage | 3V |
| RoHS Compliant | Yes |
| Voltage Rating | 5V |
| Contact Plating | Tin, Matte |
| DC Rated Voltage | 5V |
| Package Quantity | 3000 |
| Power Dissipation | 725mW |
| Operating Frequency | 2 GHz |
| Radiation Hardening | No |
| Reach SVHC Compliant | No |
| Max Power Dissipation | 725mW |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -65°C |
| Gate to Source Voltage (Vgs) | 1V |
| Continuous Drain Current (ID) | 120mA |
| Drain to Source Voltage (Vdss) | 5V |
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