ATF-541M4-TR1
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Краткое описание:
2GHz RF FET, N-Channel, 120mA ID, 5V Vdss, 0.5dB NF, GaAs, SMT
Дополнительная информация
RF Small Signal Field-Effect Transistor, N-Channel, Silicon, High Electron Mobility FET. Features 2 GHz operating frequency, 17.5 dB gain, and 0.5 dB noise figure. Continuous drain current is 120mA with a drain to source breakdown voltage of 5V. Packaged in a 0505 surface mount case, this lead-free component operates from -65°C to 150°C.
| Gain | 17.5dB |
| RoHS | Compliant |
| Mount | Surface Mount |
| Polarity | N-CHANNEL |
| Frequency | 2GHz |
| Lead Free | Lead Free |
| Packaging | Tape and Reel |
| Technology | GAAS |
| Noise Figure | 0.5dB |
| Package/Case | 0505 |
| Test Voltage | 3V |
| Current Rating | 60A |
| RoHS Compliant | Yes |
| Voltage Rating | 5V |
| DC Rated Voltage | 3V |
| Package Quantity | 3000 |
| Power Dissipation | 360mW |
| Case Code (Metric) | 1412 |
| Operating Frequency | 2 GHz |
| Radiation Hardening | No |
| Case Code (Imperial) | 0505 |
| Reach SVHC Compliant | Unknown |
| Max Power Dissipation | 360mW |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -65°C |
| Gate to Source Voltage (Vgs) | 1V |
| Continuous Drain Current (ID) | 120mA |
| Drain to Source Voltage (Vdss) | 5V |
| Drain to Source Breakdown Voltage | 5V |
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