ATF-58143-TR1G
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GaAs RF FET Transistor, 2GHz, 5V, 100mA, 0.5dB NF, SOT-343
Дополнительная информация
Surface mount RF small signal field-effect transistor designed for C-band applications. Features N-channel, high electron mobility FET technology with a 2 GHz operating frequency. Delivers 16.5dB gain and a low 0.5dB noise figure. Rated for 5V drain-to-source voltage and 100mA continuous drain current. Housed in a 4-pin SC-70 (SOT-343) package with tin, matte contact plating. Lead-free and RoHS compliant, operating from -65°C to 150°C.
| Gain | 16.5dB |
| RoHS | Compliant |
| Mount | Surface Mount |
| Frequency | 2GHz |
| Lead Free | Lead Free |
| Packaging | Tape and Reel |
| Technology | GAAS |
| Noise Figure | 0.5dB |
| Package/Case | SOT-343 |
| Test Voltage | 3V |
| Current Rating | 100mA |
| RoHS Compliant | Yes |
| Voltage Rating | 5V |
| Contact Plating | Tin, Matte |
| DC Rated Voltage | 3V |
| Package Quantity | 3000 |
| Power Dissipation | 500mW |
| Operating Frequency | 2 GHz |
| Radiation Hardening | No |
| Max Power Dissipation | 500mW |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -65°C |
| Gate to Source Voltage (Vgs) | 1V |
| Continuous Drain Current (ID) | 100mA |
| Drain to Source Voltage (Vdss) | 5V |
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