AUIRF1324S
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Краткое описание:
N-Channel MOSFET, 24V, 340A, 1.65mR, D2PAK, Surface Mount
Дополнительная информация
N-channel MOSFET transistor featuring a 24V drain-source breakdown voltage and 340A continuous drain current. Offers a low 1.65mΩ Rds On resistance at 10V gate-source voltage. This surface-mount device operates within a -55°C to 175°C temperature range and has a maximum power dissipation of 300W. Includes a 2V threshold voltage and is RoHS compliant.
| RoHS | Compliant |
| Mount | Surface Mount |
| Width | 9.65mm |
| Height | 4.576mm |
| Length | 10.67mm |
| Series | HEXFET® |
| Polarity | N-CHANNEL |
| Packaging | Rail/Tube |
| Rds On Max | 1.65mR |
| Package/Case | D2PAK |
| RoHS Compliant | Yes |
| Package Quantity | 50 |
| Input Capacitance | 7.59nF |
| Power Dissipation | 300W |
| Threshold Voltage | 2V |
| Number of Elements | 1 |
| Turn-On Delay Time | 17ns |
| Radiation Hardening | No |
| Turn-Off Delay Time | 83ns |
| Reach SVHC Compliant | No |
| Max Power Dissipation | 300W |
| Max Operating Temperature | 175°C |
| Min Operating Temperature | -55°C |
| Drain to Source Resistance | 1.65mR |
| Gate to Source Voltage (Vgs) | 20V |
| Continuous Drain Current (ID) | 340A |
| Drain to Source Voltage (Vdss) | 24V |
| Drain to Source Breakdown Voltage | 24V |
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