AUIRF3007
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Краткое описание:
75V 80A N-Channel MOSFET, TO-220AB, 12.6mR Rds(on)
Дополнительная информация
N-channel power MOSFET featuring 75V drain-to-source breakdown voltage and 80A continuous drain current. This through-hole component offers a low 12.6mΩ drain-to-source resistance (Rds On Max) and a maximum power dissipation of 200W. Operating across a wide temperature range from -55°C to 175°C, it includes fast switching characteristics with a 12ns turn-on delay and 49ns fall time. Packaged in a TO-220AB case, this RoHS compliant device is ideal for high-power switching applications.
| RoHS | Compliant |
| Mount | Through Hole |
| Width | 4.83mm |
| Height | 9.02mm |
| Length | 10.67mm |
| Series | HEXFET® |
| Polarity | N-CHANNEL |
| Fall Time | 49ns |
| Packaging | Rail/Tube |
| Rds On Max | 12.6mR |
| Package/Case | TO-220AB |
| RoHS Compliant | Yes |
| Package Quantity | 50 |
| Input Capacitance | 3.27nF |
| Power Dissipation | 200W |
| Number of Elements | 1 |
| Turn-On Delay Time | 12ns |
| Radiation Hardening | No |
| Turn-Off Delay Time | 55ns |
| Max Power Dissipation | 200W |
| Max Operating Temperature | 175°C |
| Min Operating Temperature | -55°C |
| Drain to Source Resistance | 12.6mR |
| Gate to Source Voltage (Vgs) | 20V |
| Continuous Drain Current (ID) | 80A |
| Drain to Source Voltage (Vdss) | 75V |
| Drain to Source Breakdown Voltage | 75V |
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