AUIRF3808S
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Краткое описание:
N-Channel MOSFET, 75V, 106A, 7mR, D2PAK, Surface Mount
Дополнительная информация
N-Channel Power MOSFET, D2PAK package, featuring 75V drain-source breakdown voltage and 106A continuous drain current. This silicon, metal-oxide semiconductor FET offers a low 7mΩ Rds On resistance and 200W maximum power dissipation. Designed for surface mounting, it operates across a wide temperature range of -55°C to 175°C with fast switching times, including a 16ns turn-on delay and 68ns turn-off delay. RoHS compliant.
| RoHS | Compliant |
| Mount | Surface Mount |
| Width | 9.65mm |
| Height | 4.83mm |
| Length | 10.67mm |
| Series | HEXFET® |
| Polarity | N-CHANNEL |
| Packaging | Rail/Tube |
| Rds On Max | 7mR |
| Package/Case | D2PAK |
| RoHS Compliant | Yes |
| Package Quantity | 50 |
| Input Capacitance | 5.31nF |
| Power Dissipation | 200W |
| Number of Elements | 1 |
| Turn-On Delay Time | 16ns |
| Radiation Hardening | No |
| Turn-Off Delay Time | 68ns |
| Reach SVHC Compliant | No |
| Max Power Dissipation | 200W |
| Max Operating Temperature | 175°C |
| Min Operating Temperature | -55°C |
| Gate to Source Voltage (Vgs) | 20V |
| Continuous Drain Current (ID) | 106A |
| Drain to Source Voltage (Vdss) | 75V |
| Drain to Source Breakdown Voltage | 75V |
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