AUIRF7303Q
Увеличить
Краткое описание:
30V 5.3A N-Channel MOSFET, 50mR Rds On, SOIC, 2-Element
Дополнительная информация
Surface mount N-channel power MOSFET featuring 30V drain-to-source breakdown voltage and 5.3A continuous drain current. This dual-element silicon Metal-oxide Semiconductor FET offers a low 50mΩ drain-to-source resistance. Key switching characteristics include a 2.9ns turn-on delay and 7.8ns fall time, with an input capacitance of 515pF. Operating across a temperature range of -55°C to 150°C, it supports a maximum power dissipation of 2.4W.
| RoHS | Compliant |
| Mount | Surface Mount |
| Width | 4mm |
| Height | 1.5mm |
| Length | 5mm |
| Series | HEXFET® |
| FET Type | 2 N-Channel |
| Polarity | N-CHANNEL |
| Fall Time | 7.8ns |
| Packaging | Rail/Tube |
| Rds On Max | 50mR |
| Nominal Vgs | 1V |
| Package/Case | SOIC |
| RoHS Compliant | Yes |
| Package Quantity | 95 |
| Input Capacitance | 515pF |
| Power Dissipation | 2W |
| Number of Elements | 2 |
| Turn-On Delay Time | 2.9ns |
| Radiation Hardening | No |
| Turn-Off Delay Time | 15ns |
| Reach SVHC Compliant | No |
| Max Power Dissipation | 2.4W |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Drain to Source Resistance | 80mR |
| Gate to Source Voltage (Vgs) | 20V |
| Continuous Drain Current (ID) | 5.3A |
| Drain to Source Voltage (Vdss) | 30V |
| Drain to Source Breakdown Voltage | 30V |
Если у вас не открывается документ, нажмите, чтобы открыть файл в новой вкладке.
