AUIRF7313Q
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Краткое описание:
30V N-Channel MOSFET, 6.9A, 29mR, SOIC, Surface Mount
Дополнительная информация
Dual N-Channel Power MOSFET, designed for surface mount applications. Features a 30V Drain to Source Breakdown Voltage (Vdss) and a low 23mΩ Drain to Source Resistance (Rds On Max). Operates with a Gate to Source Voltage (Vgs) up to 20V and handles a Continuous Drain Current (ID) of 6.9A. This component offers fast switching speeds with a Fall Time of 11ns and Turn-Off Delay Time of 21ns. Encased in a compact SOIC package, it supports a wide operating temperature range from -55°C to 175°C.
| RoHS | Compliant |
| Mount | Surface Mount |
| Width | 4mm |
| Height | 1.5mm |
| Length | 5mm |
| Series | HEXFET® |
| FET Type | 2 N-Channel |
| Polarity | N-CHANNEL |
| Fall Time | 11ns |
| Packaging | Rail/Tube |
| Rds On Max | 29mR |
| Package/Case | SOIC |
| RoHS Compliant | Yes |
| Package Quantity | 95 |
| Input Capacitance | 755pF |
| Power Dissipation | 2.4W |
| Number of Elements | 2 |
| Turn-On Delay Time | 3.7ns |
| Radiation Hardening | No |
| Turn-Off Delay Time | 21ns |
| Max Power Dissipation | 2.4W |
| Max Operating Temperature | 175°C |
| Min Operating Temperature | -55°C |
| Drain to Source Resistance | 23mR |
| Gate to Source Voltage (Vgs) | 20V |
| Continuous Drain Current (ID) | 6.9A |
| Drain to Source Voltage (Vdss) | 30V |
| Drain to Source Breakdown Voltage | 30V |
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