AUIRF7416Q
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Краткое описание:
P-Channel MOSFET, -30V, -10A, 35mR, SOIC, Surface Mount
Дополнительная информация
P-channel power MOSFET with -30V drain-source breakdown voltage and -10A continuous drain current. Features low 35mΩ drain-to-source resistance and 2.5W maximum power dissipation. Operates across a -55°C to 150°C temperature range. Packaged in a surface-mount SOIC (SOP-8) with dimensions of 5mm length, 4mm width, and 1.5mm height. RoHS compliant.
| RoHS | Compliant |
| Mount | Surface Mount |
| Width | 4mm |
| Height | 1.5mm |
| Length | 5mm |
| Polarity | P-CHANNEL |
| Fall Time | 60ns |
| Packaging | Rail/Tube |
| Package/Case | SOIC |
| RoHS Compliant | Yes |
| Package Quantity | 95 |
| Input Capacitance | 1.7nF |
| Power Dissipation | 2.5W |
| Number of Elements | 1 |
| Turn-On Delay Time | 18ns |
| Radiation Hardening | No |
| Turn-Off Delay Time | 59ns |
| Reach SVHC Compliant | No |
| Max Power Dissipation | 2.5W |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Drain to Source Resistance | 35mR |
| Gate to Source Voltage (Vgs) | 20V |
| Continuous Drain Current (ID) | -10A |
| Drain to Source Voltage (Vdss) | -30V |
| Drain to Source Breakdown Voltage | -30V |
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