AUIRF7669L2TR1
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Краткое описание:
N-CH MOSFET, 100V, 19A, 4.4mR, Surface Mount
Дополнительная информация
N-channel MOSFET with 100V drain-source breakdown voltage and 4.4mR maximum drain-source on-resistance. Features 19A continuous drain current, 4V nominal gate-source voltage, and 175°C maximum operating temperature. Surface mount component with 7.1mm width, 9.15mm length, and 0.74mm height, supplied on tape and reel. RoHS compliant with 15ns turn-on delay and 27ns turn-off delay.
| RoHS | Compliant |
| Mount | Surface Mount |
| Width | 7.1mm |
| Height | 0.74mm |
| Length | 9.15mm |
| Series | HEXFET® |
| Polarity | N-CHANNEL |
| Fall Time | 14ns |
| Lead Free | Lead Free |
| Packaging | Tape and Reel |
| Rds On Max | 4.4mR |
| Nominal Vgs | 4V |
| RoHS Compliant | Yes |
| Package Quantity | 1000 |
| Input Capacitance | 5.66nF |
| Power Dissipation | 100W |
| Threshold Voltage | 4V |
| Turn-On Delay Time | 15ns |
| Radiation Hardening | No |
| Turn-Off Delay Time | 27ns |
| Reach SVHC Compliant | No |
| Max Power Dissipation | 3.3W |
| Max Operating Temperature | 175°C |
| Min Operating Temperature | -55°C |
| Drain to Source Resistance | 4.4mR |
| Gate to Source Voltage (Vgs) | 20V |
| Continuous Drain Current (ID) | 19A |
| Drain to Source Voltage (Vdss) | 100V |
| Drain-source On Resistance-Max | 4.4MR |
| Drain to Source Breakdown Voltage | 100V |
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