AUIRF7736M2TR1
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Краткое описание:
N-Channel MOSFET, 40V, 22A, 3mR Rds On, Surface Mount
Дополнительная информация
N-channel MOSFET transistor featuring 40V drain-source breakdown voltage and 22A continuous drain current. Offers a low 2.5mΩ maximum drain-source on-resistance at 3V nominal gate-source voltage. Designed for surface mounting with a 6.35mm length, 5.05mm width, and 0.74mm height. Operates across a wide temperature range from -55°C to 175°C, with a maximum power dissipation of 63W. RoHS compliant and lead-free.
| RoHS | Compliant |
| Mount | Surface Mount |
| Width | 5.05mm |
| Height | 0.74mm |
| Length | 6.35mm |
| Series | HEXFET® |
| Polarity | N-CHANNEL |
| Fall Time | 27ns |
| Lead Free | Lead Free |
| Packaging | Tape and Reel |
| Rds On Max | 3mR |
| Nominal Vgs | 3V |
| RoHS Compliant | Yes |
| Package Quantity | 1000 |
| Input Capacitance | 4.267nF |
| Power Dissipation | 63W |
| Threshold Voltage | 3V |
| Number of Elements | 1 |
| Turn-On Delay Time | 21ns |
| Radiation Hardening | No |
| Turn-Off Delay Time | 39ns |
| Reach SVHC Compliant | No |
| Max Power Dissipation | 2.5W |
| Max Operating Temperature | 175°C |
| Min Operating Temperature | -55°C |
| Drain to Source Resistance | 3mR |
| Gate to Source Voltage (Vgs) | 20V |
| Continuous Drain Current (ID) | 22A |
| Drain to Source Voltage (Vdss) | 40V |
| Drain-source On Resistance-Max | 2.5MR |
| Drain to Source Breakdown Voltage | 40V |
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