AUIRF7738L2TR1
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Краткое описание:
N-CH MOSFET, 40V, 315A, 1.6mR, DirectFET, Surface Mount
Дополнительная информация
N-channel MOSFET featuring 40V drain-source breakdown voltage and 35A continuous drain current. Offers a low 1.6mΩ drain-to-source resistance. Designed for surface mounting with a compact 9.15mm x 7.1mm x 0.74mm footprint. Operates across a wide temperature range from -55°C to 175°C, with a maximum power dissipation of 94W. RoHS compliant and supplied in tape and reel packaging.
| RoHS | Compliant |
| Mount | Surface Mount |
| Width | 7.1mm |
| Height | 0.74mm |
| Length | 9.15mm |
| Series | HEXFET® |
| Polarity | N-CHANNEL |
| Fall Time | 38ns |
| Lead Free | Lead Free |
| Packaging | Tape and Reel |
| Rds On Max | 1.6mR |
| Nominal Vgs | 3V |
| RoHS Compliant | Yes |
| Package Quantity | 1000 |
| Input Capacitance | 7.471nF |
| Power Dissipation | 94W |
| Turn-On Delay Time | 21ns |
| Radiation Hardening | No |
| Turn-Off Delay Time | 39ns |
| Reach SVHC Compliant | No |
| Max Power Dissipation | 3.3W |
| Max Operating Temperature | 175°C |
| Min Operating Temperature | -55°C |
| Drain to Source Resistance | 1.6mR |
| Gate to Source Voltage (Vgs) | 20V |
| Continuous Drain Current (ID) | 35A |
| Drain to Source Voltage (Vdss) | 40V |
| Drain to Source Breakdown Voltage | 40V |
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