AUIRF7739L2TR
Производится
Краткое описание:
N-CH Power MOSFET 40V 46A Si Direct-FET L8 SMT
Дополнительная информация
Automotive N-channel Power MOSFET featuring 40V drain-source voltage and 46A continuous drain current. This surface-mount component utilizes DirectFET process technology with a 15-pin, lead-frame SMT package measuring 7.1mm x 9.15mm x 0.49mm. Key specifications include a maximum power dissipation of 3800mW and a low drain-source on-resistance of 1mOhm at 10V. Operating temperature range is -55°C to 175°C.
| PCB | 15 |
| ECCN | EAR99 |
| EU RoHS | Yes |
| Category | Power MOSFET |
| HTS Code | 8541290095 |
| Material | Si |
| Mounting | Surface Mount |
| Cage Code | CG091 |
| Pin Count | 15 |
| Automotive | Yes |
| Lead Shape | No Lead |
| Schedule B | 8541290080 |
| Channel Mode | Enhancement |
| Channel Type | N |
| Package/Case | Direct-FET L8 |
| AEC Qualified | Yes |
| Configuration | Single Quad Drain |
| RoHS Versions | 2011/65/EU, 2015/863 |
| Package Material | Copper |
| Basic Package Type | Lead-Frame SMT |
| Package Width (mm) | 9.15(Max) |
| Process Technology | DirectFET |
| Package Description | Metal Can Direct FET Package |
| Package Height (mm) | 0.49(Max) |
| Package Length (mm) | 7.1(Max) |
| Radiation Hardening | No |
| Seated Plane Height (mm) | 0.74(Max) |
| Max Operating Temperature | 175°C |
| Maximum Power Dissipation | 3800mW |
| Min Operating Temperature | -55°C |
| Typical Gate Charge @ 10V | 220nC |
| Typical Gate Charge @ Vgs | 220@10VnC |
| Maximum Gate Source Voltage | ±20V |
| Number of Elements per Chip | 1 |
| Maximum Drain Source Voltage | 40V |
| Maximum Drain Source Resistance | 1@10VmOhm |
| Typical Input Capacitance @ Vds | 11880@25VpF |
| Maximum Continuous Drain Current | 46A |
Если у вас не открывается документ, нажмите, чтобы открыть файл в новой вкладке.
