AUIRFR4104
Производится
Увеличить
Краткое описание:
N-Channel MOSFET, 40V, 119A, 5.5mR, DPAK, Surface Mount
Дополнительная информация
N-channel MOSFET transistor featuring 40V drain-source breakdown voltage and 4.3 mohm maximum drain-source on-resistance at 10V gate-source voltage. Offers a continuous drain current of 119A and a maximum power dissipation of 140W. This surface-mount component is housed in a DPAK package, with a threshold voltage of 2V and operating temperatures from -55°C to 175°C. RoHS compliant with 17ns turn-on and 37ns turn-off delay times.
| RoHS | Compliant |
| Mount | Surface Mount |
| Width | 6.22mm |
| Height | 2.39mm |
| Length | 6.73mm |
| Polarity | N-CHANNEL |
| Lead Free | Lead Free |
| Packaging | Rail/Tube |
| Package/Case | DPAK |
| RoHS Compliant | Yes |
| Package Quantity | 75 |
| Input Capacitance | 2.95nF |
| Power Dissipation | 140W |
| Threshold Voltage | 2V |
| Number of Elements | 1 |
| Turn-On Delay Time | 17ns |
| Radiation Hardening | No |
| Turn-Off Delay Time | 37ns |
| Reach SVHC Compliant | No |
| Max Power Dissipation | 140W |
| Max Operating Temperature | 175°C |
| Min Operating Temperature | -55°C |
| Drain to Source Resistance | 5.5mR |
| Gate to Source Voltage (Vgs) | 20V |
| Continuous Drain Current (ID) | 119A |
| Drain to Source Voltage (Vdss) | 40V |
| Drain-source On Resistance-Max | 5.5MR |
| Drain to Source Breakdown Voltage | 40V |
Если у вас не открывается документ, нажмите, чтобы открыть файл в новой вкладке.
