AUIRFS3607
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N-CH MOSFET, 75V, 80A, 7.34mR, D2PAK, Surface Mount
Дополнительная информация
N-channel MOSFET, D2PAK package, featuring 75V drain-to-source breakdown voltage and 80A continuous drain current. Offers low on-resistance of 7.34mR at 10Vgs and 160A pulsed drain current. Operates from -55°C to 175°C with a maximum power dissipation of 140W. Surface mount component with 3.07nF input capacitance and 43ns turn-off delay.
| RoHS | Compliant |
| Mount | Surface Mount |
| Width | 9.65mm |
| Height | 4.83mm |
| Length | 10.67mm |
| Series | HEXFET® |
| Polarity | N-CHANNEL |
| Packaging | Rail/Tube |
| Rds On Max | 9mR |
| Package/Case | D2PAK |
| RoHS Compliant | Yes |
| Package Quantity | 50 |
| Input Capacitance | 3.07nF |
| Power Dissipation | 140W |
| Number of Elements | 1 |
| Turn-On Delay Time | 16ns |
| Radiation Hardening | No |
| Turn-Off Delay Time | 43ns |
| Reach SVHC Compliant | No |
| Max Power Dissipation | 140W |
| Max Operating Temperature | 175°C |
| Min Operating Temperature | -55°C |
| Drain to Source Resistance | 7.34mR |
| Gate to Source Voltage (Vgs) | 20V |
| Continuous Drain Current (ID) | 80A |
| Drain to Source Voltage (Vdss) | 75V |
| Drain to Source Breakdown Voltage | 75V |
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