AUIRFU4104
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Краткое описание:
N-Channel MOSFET, 40V, 119A, 5.5mR Rds On, TO-251
Дополнительная информация
N-channel MOSFET transistor featuring 40V drain-to-source breakdown voltage and 4.3mΩ low on-resistance. This component offers a continuous drain current of 119A and a maximum power dissipation of 140W. Designed for through-hole mounting in a TO-251-3 package, it operates within a temperature range of -55°C to 175°C. Key electrical characteristics include a 2V threshold voltage and 2.95nF input capacitance.
| RoHS | Compliant |
| Mount | Through Hole |
| Width | 2.39mm |
| Height | 7.49mm |
| Length | 6.73mm |
| Series | HEXFET® |
| Polarity | N-CHANNEL |
| Packaging | Rail/Tube |
| Rds On Max | 5.5mR |
| Package/Case | TO-251-3 |
| RoHS Compliant | Yes |
| Package Quantity | 75 |
| Input Capacitance | 2.95nF |
| Power Dissipation | 140W |
| Threshold Voltage | 2V |
| Number of Elements | 1 |
| Turn-On Delay Time | 17ns |
| Radiation Hardening | No |
| Turn-Off Delay Time | 37ns |
| Reach SVHC Compliant | No |
| Max Power Dissipation | 140W |
| Max Operating Temperature | 175°C |
| Min Operating Temperature | -55°C |
| Drain to Source Resistance | 5.5mR |
| Gate to Source Voltage (Vgs) | 20V |
| Continuous Drain Current (ID) | 119A |
| Drain to Source Voltage (Vdss) | 40V |
| Drain to Source Breakdown Voltage | 40V |
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