AUIRLR3636
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Краткое описание:
N-Channel MOSFET, 60V, 99A, 8.3mR, DPAK, Surface Mount
Дополнительная информация
N-Channel Power MOSFET, DPAK package, featuring 60V drain-source breakdown voltage and 99A continuous drain current. Offers low 8.3mΩ drain-source on-resistance at a 10V gate-source voltage. Maximum power dissipation is 143W, with operating temperatures from -55°C to 175°C. This surface-mount component is RoHS compliant.
| RoHS | Compliant |
| Mount | Surface Mount |
| Width | 6.22mm |
| Height | 2.39mm |
| Length | 6.73mm |
| Polarity | N-CHANNEL |
| Lead Free | Lead Free |
| Packaging | Rail/Tube |
| Package/Case | DPAK |
| RoHS Compliant | Yes |
| Package Quantity | 75 |
| Input Capacitance | 3.779nF |
| Power Dissipation | 143W |
| Threshold Voltage | 1V |
| Number of Elements | 1 |
| Turn-On Delay Time | 45ns |
| Radiation Hardening | No |
| Turn-Off Delay Time | 43ns |
| Reach SVHC Compliant | No |
| Max Power Dissipation | 143W |
| Max Operating Temperature | 175°C |
| Min Operating Temperature | -55°C |
| Drain to Source Resistance | 8.3mR |
| Gate to Source Voltage (Vgs) | 16V |
| Continuous Drain Current (ID) | 99A |
| Drain to Source Voltage (Vdss) | 60V |
| Drain-source On Resistance-Max | 6.8MR |
| Drain to Source Breakdown Voltage | 60V |
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