BC141-16
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NPN BJT, 60V, 1A, 50MHz, TO-39, Small Signal Transistor
Дополнительная информация
NPN Silicon Bipolar Junction Transistor (BJT) for small signal applications. Features a 60V collector-emitter breakdown voltage and a 1A maximum collector current. Offers a minimum DC current gain (hFE) of 100 and a transition frequency of 50MHz. Packaged in a TO-39 metal package with 3 leads, suitable for through-hole mounting. Operates across a temperature range of -55°C to 175°C.
| RoHS | Compliant |
| Mount | Through Hole |
| Series | BC141 |
| hFE Min | 100 |
| Polarity | NPN |
| Frequency | 50MHz |
| Lead Free | Lead Free |
| Packaging | Bulk |
| Package/Case | TO-39 |
| Max Frequency | 50MHz |
| Current Rating | 1A |
| RoHS Compliant | Yes |
| DC Rated Voltage | 60V |
| Package Quantity | 500 |
| Power Dissipation | 650mW |
| Number of Elements | 1 |
| Radiation Hardening | No |
| Reach SVHC Compliant | No |
| Transition Frequency | 50MHz |
| Max Collector Current | 1A |
| Max Power Dissipation | 650mW |
| Gain Bandwidth Product | 50MHz |
| Max Operating Temperature | 175°C |
| Min Operating Temperature | -55°C |
| Emitter Base Voltage (VEBO) | 7V |
| Collector Base Voltage (VCBO) | 100V |
| Collector-emitter Voltage-Max | 1V |
| Collector Emitter Voltage (VCEO) | 60V |
| Collector Emitter Breakdown Voltage | 60V |
| Collector Emitter Saturation Voltage | 600mV |
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