BC32716TA

Снят с производства
BC32716TA - Onsemi
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Краткое описание: PNP BJT Transistor, 45V VCEO, 800mA IC, 100MHz fT, TO-92
Производитель Onsemi
Статус производства Снят с производства (OBSOLETE)

Дополнительная информация

PNP Bipolar Junction Transistor (BJT) with a 45V collector-emitter voltage (VCEO) and a maximum collector current of 800mA. Features a transition frequency of 100MHz, a minimum hFE of 100, and a collector-emitter saturation voltage of -700mV. Packaged in a TO-92 through-hole mount with matte tin plating, this RoHS compliant component operates from -55°C to 150°C with a power dissipation of 625mW.
RoHS Compliant
Mount Through Hole
Width 3.86mm
Height 4.58mm
Length 4.58mm
Weight 0.24g
hFE Min 100
Polarity PNP
Frequency 100MHz
Lead Free Lead Free
Packaging Ammo Pack
Package/Case TO-92
Max Frequency 100MHz
Current Rating -800mA
RoHS Compliant Yes
Contact Plating Tin, Matte
DC Rated Voltage -45V
Package Quantity 1
Power Dissipation 625mW
Number of Elements 1
Radiation Hardening No
Reach SVHC Compliant No
Transition Frequency 100MHz
Max Breakdown Voltage 45V
Max Collector Current 800mA
Max Power Dissipation 625mW
Gain Bandwidth Product 100MHz
Max Operating Temperature 150°C
Min Operating Temperature -55°C
Emitter Base Voltage (VEBO) -5V
Collector Base Voltage (VCBO) -10V
Collector-emitter Voltage-Max 700mV
Collector Emitter Voltage (VCEO) 45V
Collector Emitter Breakdown Voltage 45V
Collector Emitter Saturation Voltage -700mV

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