BC546
Снят с производства
Увеличить
Краткое описание:
NPN BJT Transistor, 65V VCEO, 100mA IC, TO-92, 300MHz
Дополнительная информация
NPN Silicon Bipolar Junction Transistor (BJT) in TO-92 package. Features a 65V collector-emitter voltage (VCEO) and 80V collector-base voltage (VCBO). Offers a maximum collector current of 100mA and a transition frequency of 300MHz. Includes a minimum DC current gain (hFE) of 110 and a maximum power dissipation of 500mW. Designed for through-hole mounting and supplied in bulk packaging.
| RoHS | Not CompliantNo |
| Mount | Through Hole |
| Weight | 0.2g |
| hFE Min | 110 |
| Polarity | NPN |
| Frequency | 300MHz |
| Lead Free | Lead Free |
| Packaging | Bulk |
| Termination | Through Hole |
| Package/Case | TO-92 |
| Max Frequency | 300MHz |
| Current Rating | 100mA |
| RoHS Compliant | No |
| DC Rated Voltage | 65V |
| Package Quantity | 2000 |
| Power Dissipation | 500mW |
| Number of Elements | 1 |
| Radiation Hardening | No |
| Reach SVHC Compliant | No |
| Transition Frequency | 300MHz |
| Max Collector Current | 100mA |
| Max Power Dissipation | 500mW |
| Gain Bandwidth Product | 300MHz |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -65°C |
| Emitter Base Voltage (VEBO) | 6V |
| Collector Base Voltage (VCBO) | 80V |
| Collector-emitter Voltage-Max | 600mV |
| Collector Emitter Voltage (VCEO) | 65V |
| Collector Emitter Breakdown Voltage | 65V |
| Collector Emitter Saturation Voltage | 250mV |
Если у вас не открывается документ, нажмите, чтобы открыть файл в новой вкладке.
