BC546ABU
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NPN BJT Transistor, 65V VCEO, 100mA IC, TO-92, 300MHz
Дополнительная информация
NPN Silicon Bipolar Junction Transistor (BJT) in a TO-92 package. Features a 65V collector-emitter breakdown voltage and 100mA maximum collector current. Offers a minimum DC current gain (hFE) of 110 and a transition frequency of 300MHz. Operates across a temperature range of -65°C to 150°C with 500mW power dissipation. Through-hole mounting with tin, matte contact plating.
| RoHS | Compliant |
| Mount | Through Hole |
| Width | 3.86mm |
| Height | 4.58mm |
| Length | 4.58mm |
| Weight | 0.179g |
| hFE Min | 110 |
| Polarity | NPN |
| Frequency | 300MHz |
| Lead Free | Lead Free |
| Packaging | Bulk |
| Package/Case | TO-92 |
| Max Frequency | 1MHz |
| Current Rating | 100mA |
| RoHS Compliant | Yes |
| Contact Plating | Tin, Matte |
| DC Rated Voltage | 65V |
| Package Quantity | 1000 |
| Power Dissipation | 500mW |
| Number of Elements | 1 |
| Reach SVHC Compliant | No |
| Transition Frequency | 300MHz |
| Max Collector Current | 100mA |
| Max Power Dissipation | 500mW |
| Gain Bandwidth Product | 300MHz |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -65°C |
| Emitter Base Voltage (VEBO) | 6V |
| Collector Base Voltage (VCBO) | 80V |
| Collector-emitter Voltage-Max | 600mV |
| Collector Emitter Voltage (VCEO) | 65V |
| Collector Emitter Breakdown Voltage | 65V |
| Collector Emitter Saturation Voltage | 250mV |
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