BC548BU
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NPN BJT Transistor, 30V, 100mA, 300MHz, TO-92
Дополнительная информация
NPN Epitaxial Silicon Transistor, TO-92 package, featuring a 30V Collector Emitter Voltage (VCEO) and 30V Collector Base Voltage (VCBO). This component offers a maximum collector current of 100mA and a power dissipation of 500mW, with a minimum DC current gain (hFE) of 110. Operating across a wide temperature range from -65°C to 150°C, it boasts a transition frequency of 300MHz. Designed for through-hole mounting, this RoHS compliant transistor is supplied in bulk packaging.
| RoHS | Compliant |
| Mount | Through Hole |
| Width | 3.86mm |
| Height | 4.58mm |
| Length | 4.58mm |
| Weight | 0.179g |
| hFE Min | 110 |
| Polarity | NPN |
| Frequency | 300MHz |
| Lead Free | Lead Free |
| Packaging | Bulk |
| Package/Case | TO-92 |
| Max Frequency | 1MHz |
| Current Rating | 100mA |
| RoHS Compliant | Yes |
| Contact Plating | Tin, Matte |
| DC Rated Voltage | 30V |
| Package Quantity | 1000 |
| Power Dissipation | 500mW |
| Number of Elements | 1 |
| Reach SVHC Compliant | No |
| Transition Frequency | 300MHz |
| Max Collector Current | 100mA |
| Max Power Dissipation | 500mW |
| Gain Bandwidth Product | 300MHz |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -65°C |
| Emitter Base Voltage (VEBO) | 5V |
| Collector Base Voltage (VCBO) | 30V |
| Collector-emitter Voltage-Max | 600mV |
| Collector Emitter Voltage (VCEO) | 30V |
| Collector Emitter Breakdown Voltage | 30V |
| Collector Emitter Saturation Voltage | 250mV |
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