BC556ABU
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PNP BJT Transistor, 65V, 100mA, 150MHz, TO-92
Дополнительная информация
PNP Epitaxial Silicon Transistor, TO-92 package, featuring a -80V Collector Base Voltage and 65V Collector Emitter Voltage. This bipolar junction transistor offers a maximum collector current of 100mA and a transition frequency of 150MHz. With a minimum hFE of 110 and a power dissipation of 500mW, it operates within a temperature range of -65°C to 150°C. Through-hole mounting and tin-matte contact plating are standard.
| RoHS | Compliant |
| Mount | Through Hole |
| Width | 4.19mm |
| Height | 5.33mm |
| Length | 5.2mm |
| Weight | 0.179g |
| hFE Min | 110 |
| Polarity | PNP |
| Frequency | 150MHz |
| Lead Free | Lead Free |
| Packaging | Bulk |
| Package/Case | TO-92 |
| Max Frequency | 10MHz |
| Current Rating | -100mA |
| RoHS Compliant | Yes |
| Contact Plating | Tin, Matte |
| DC Rated Voltage | -65V |
| Package Quantity | 1000 |
| Power Dissipation | 500mW |
| Number of Elements | 1 |
| Reach SVHC Compliant | No |
| Transition Frequency | 150MHz |
| Max Collector Current | 100mA |
| Max Power Dissipation | 500mW |
| Gain Bandwidth Product | 150MHz |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -65°C |
| Emitter Base Voltage (VEBO) | -5V |
| Collector Base Voltage (VCBO) | -80V |
| Collector-emitter Voltage-Max | 650mV |
| Collector Emitter Voltage (VCEO) | 65V |
| Collector Emitter Breakdown Voltage | 65V |
| Collector Emitter Saturation Voltage | -250mV |
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