BC636TAR
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PNP BJT Transistor, 1A, 45V VCEO, 100MHz, TO-92
Дополнительная информация
PNP Silicon Bipolar Junction Transistor (BJT) in a TO-92 package. Features a maximum continuous collector current of -1A and a collector-emitter breakdown voltage of 45V. Offers a minimum DC current gain (hFE) of 40 and a transition frequency of 100MHz. Operates within a temperature range of -65°C to 150°C with a maximum power dissipation of 1W. Through-hole mounting and RoHS compliant.
| RoHS | Compliant |
| Mount | Through Hole |
| hFE Min | 40 |
| Polarity | PNP |
| Frequency | 100MHz |
| Packaging | Ammo Pack |
| Package/Case | TO-92-3 |
| RoHS Compliant | Yes |
| Package Quantity | 2000 |
| Power Dissipation | 1W |
| Number of Elements | 1 |
| Radiation Hardening | No |
| Transition Frequency | 100MHz |
| Max Collector Current | 1A |
| Max Power Dissipation | 1W |
| Gain Bandwidth Product | 100MHz |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -65°C |
| Emitter Base Voltage (VEBO) | -5V |
| Continuous Collector Current | -1A |
| Collector Base Voltage (VCBO) | -45V |
| Collector-emitter Voltage-Max | 500mV |
| Collector Emitter Voltage (VCEO) | 45V |
| Collector Emitter Breakdown Voltage | 45V |
| Collector Emitter Saturation Voltage | -500mV |
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