BC807-16-7
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PNP BJT Transistor, 45V VCEO, 500mA IC, 100MHz, SOT-23
Дополнительная информация
PNP Silicon Bipolar Junction Transistor (BJT) in a SOT-23 surface mount package. Features a 45V collector-emitter breakdown voltage (VCEO) and a maximum collector current of 500mA. Offers a minimum DC current gain (hFE) of 100 and a transition frequency of 100MHz. Operates across a wide temperature range from -65°C to 150°C with a maximum power dissipation of 310mW.
| RoHS | Not Compliant |
| Mount | Surface Mount |
| Width | 1.4mm |
| Height | 1mm |
| Length | 3.05mm |
| Weight | 0.000282oz |
| hFE Min | 100 |
| Polarity | PNP |
| Frequency | 100MHz |
| Lead Free | Contains Lead |
| Packaging | Tape and Reel |
| Package/Case | SOT-23 |
| RoHS Compliant | No |
| Package Quantity | 1 |
| Power Dissipation | 310mW |
| Number of Elements | 1 |
| Reach SVHC Compliant | Yes |
| Transition Frequency | 100MHz |
| Max Breakdown Voltage | 45V |
| Max Collector Current | 500mA |
| Max Power Dissipation | 310mW |
| Gain Bandwidth Product | 100MHz |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -65°C |
| Emitter Base Voltage (VEBO) | 5V |
| Collector-emitter Voltage-Max | 700mV |
| Collector Emitter Voltage (VCEO) | 45V |
| Collector Emitter Breakdown Voltage | 45V |
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