BC807-16W-7
Производится
Увеличить
Краткое описание:
PNP BJT Transistor, 45V, 500mA, 100MHz, SOT-323
Дополнительная информация
PNP Silicon Bipolar Junction Transistor (BJT) for small signal applications. Features a 45V Collector-Emitter Breakdown Voltage (V(BR)CEO) and a maximum collector current of 500mA (0.5A I(C)). Offers a minimum DC current gain (hFE) of 100 and a transition frequency of 100MHz. Packaged in a compact SOT-323 surface mount plastic package with tin, matte contact plating. Operates across a wide temperature range from -65°C to 150°C.
| RoHS | Compliant |
| Mount | Surface Mount |
| Width | 1.35mm |
| Height | 1mm |
| Length | 2.2mm |
| Weight | 0.000282oz |
| hFE Min | 100 |
| Polarity | PNP |
| Lead Free | Lead Free |
| Packaging | Tape and Reel |
| Package/Case | SOT-323 |
| RoHS Compliant | Yes |
| Contact Plating | Tin, Matte |
| Package Quantity | 3000 |
| Reach SVHC Compliant | Yes |
| Transition Frequency | 100MHz |
| Max Breakdown Voltage | 45V |
| Max Collector Current | 500mA |
| Max Power Dissipation | 200mW |
| Gain Bandwidth Product | 100MHz |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -65°C |
| Emitter Base Voltage (VEBO) | 5V |
| Collector Base Voltage (VCBO) | 45V |
| Collector-emitter Voltage-Max | 700mV |
| Collector Emitter Breakdown Voltage | 45V |
| Collector Emitter Saturation Voltage | -700mV |
Если у вас не открывается документ, нажмите, чтобы открыть файл в новой вкладке.
