BC807-25-7-F

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BC807-25-7-F - Diodes
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Краткое описание: PNP BJT Transistor, 45V VCEO, 500mA IC, 100MHz, SOT-23
Производитель Diodes
Статус производства Производится (ACTIVE)

Дополнительная информация

PNP Silicon Bipolar Junction Transistor (BJT) in a 3-pin SOT-23 plastic package. Features a 45V Collector Emitter Breakdown Voltage (VCEO), 500mA Max Collector Current (IC), and 100MHz Gain Bandwidth Product. Offers a Collector Emitter Saturation Voltage of -700mV and an Emitter Base Voltage (VEBO) of 5V. Designed for surface mount applications with lead-free and RoHS compliance.
RoHS Compliant
Mount Surface Mount
Width 1.4mm
Height 1mm
Length 3.05mm
Weight 0.000282oz
Polarity PNP
Frequency 100MHz
Lead Free Lead Free
Packaging Tape and Reel
Package/Case SOT-23
RoHS Compliant Yes
Contact Plating Tin, Matte
Package Quantity 3000
Power Dissipation 310mW
Number of Elements 1
Reach SVHC Compliant Yes
Transition Frequency 100MHz
Max Breakdown Voltage 25V
Max Collector Current 500mA
Max Power Dissipation 310mW
Gain Bandwidth Product 100MHz
Max Operating Temperature 150°C
Min Operating Temperature -65°C
Emitter Base Voltage (VEBO) 5V
Collector-emitter Voltage-Max 700mV
Collector Emitter Voltage (VCEO) 45V
Collector Emitter Breakdown Voltage 45V
Collector Emitter Saturation Voltage -700mV

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