BC807-25LT1G

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BC807-25LT1G - Onsemi
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Краткое описание: PNP BJT Transistor 45V 0.5A 100MHz SOT-23
Производитель Onsemi
Статус производства Производится (ACTIVE)

Дополнительная информация

PNP Bipolar Junction Transistor (BJT) for general-purpose applications. Features a 45V collector-emitter breakdown voltage and a maximum collector current of 500mA. Offers a minimum DC current gain (hFE) of 160 and a transition frequency of 100MHz. Packaged in a 3-pin SOT-23 surface-mount case, this component operates within a temperature range of -55°C to 150°C and has a maximum power dissipation of 300mW. It is RoHS compliant and supplied on tape and reel.
RoHS Compliant
Type General Purpose
Width 1.3mm
Height 0.94mm
Length 2.9mm
hFE Min 160
Polarity PNP
Frequency 100MHz
Lead Free Lead Free
Packaging Tape and Reel
Halogen Free Halogen Free
Package/Case SOT-23-3
Max Frequency 100MHz
RoHS Compliant Yes
Contact Plating Tin, Matte
Package Quantity 3000
Power Dissipation 300mW
Number of Elements 1
Radiation Hardening No
Reach SVHC Compliant No
Transition Frequency 100MHz
Max Breakdown Voltage 45V
Max Collector Current 500mA
Max Power Dissipation 300mW
Gain Bandwidth Product 100MHz
Max Operating Temperature 150°C
Min Operating Temperature -55°C
Moisture Sensitivity Level 1
Emitter Base Voltage (VEBO) 5V
Collector Base Voltage (VCBO) 50V
Collector-emitter Voltage-Max 700mV
Collector Emitter Voltage (VCEO) 45V
Collector Emitter Breakdown Voltage 45V
Collector Emitter Saturation Voltage -700mV

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