BC807-40-7-F

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BC807-40-7-F - Diodes
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Краткое описание: PNP BJT Transistor, 45V VCEO, 500mA IC, 100MHz, SOT-23
Производитель Diodes
Статус производства Производится (ACTIVE)

Дополнительная информация

PNP Silicon Bipolar Junction Transistor (BJT) for general-purpose amplification and switching. Features a 45V collector-emitter breakdown voltage (VCEO) and a maximum collector current of 500mA. Operates with a 100MHz transition frequency and a 700mV collector-emitter saturation voltage. Packaged in a 3-pin SOT-23 surface-mount plastic package with tin-matte plating, suitable for tape and reel deployment. Rated for operation between -65°C and 150°C with a maximum power dissipation of 310mW.
RoHS Compliant
Mount Surface Mount
Width 1.4mm
Height 1mm
Length 3.05mm
Weight 0.000282oz
Polarity PNP
Frequency 100MHz
Packaging Tape and Reel
Package/Case SOT-23
Max Frequency 100MHz
RoHS Compliant Yes
Contact Plating Tin, Matte
Package Quantity 3000
Power Dissipation 310mW
Number of Elements 1
Radiation Hardening No
Reach SVHC Compliant No
Transition Frequency 100MHz
Max Breakdown Voltage 45V
Max Collector Current 500mA
Max Power Dissipation 310mW
Gain Bandwidth Product 100MHz
Max Operating Temperature 150°C
Min Operating Temperature -65°C
Emitter Base Voltage (VEBO) 5V
Collector-emitter Voltage-Max 700mV
Collector Emitter Voltage (VCEO) 45V
Collector Emitter Breakdown Voltage -45V
Collector Emitter Saturation Voltage -700mV

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