BC808-25LT1G

Производится
BC808-25LT1G - Onsemi
Увеличить
Краткое описание: PNP BJT Transistor, 25V VCEO, 500mA IC, SOT-23
Производитель Onsemi
Статус производства Производится (ACTIVE)

Дополнительная информация

PNP Bipolar Junction Transistor (BJT) in a SOT-23-3 package. Features a collector-emitter voltage (VCEO) of -25V and a maximum collector current of 500mA. Offers a minimum DC current gain (hFE) of 160 and a transition frequency of 100MHz. Operates within a temperature range of -55°C to 150°C and has a maximum power dissipation of 225mW. This RoHS compliant component is supplied on a 3000-piece tape and reel.
RoHS Compliant
Width 1.4mm
Height 1.01mm
Length 3.04mm
hFE Min 160
Polarity PNP
Lead Free Lead Free
Packaging Tape and Reel
Halogen Free Halogen Free
Package/Case SOT-23-3
Max Frequency 100MHz
RoHS Compliant Yes
Contact Plating Tin, Matte
Package Quantity 1
Reach SVHC Compliant No
Transition Frequency 100MHz
Max Breakdown Voltage 25V
Max Collector Current 500mA
Max Power Dissipation 225mW
Gain Bandwidth Product 100MHz
Max Operating Temperature 150°C
Min Operating Temperature -55°C
Emitter Base Voltage (VEBO) 5V
Collector Base Voltage (VCBO) -30V
Collector-emitter Voltage-Max 700mV
Collector Emitter Voltage (VCEO) -25V
Collector Emitter Breakdown Voltage 25V
Collector Emitter Saturation Voltage -700mV

Если у вас не открывается документ, нажмите, чтобы открыть файл в новой вкладке.