BC817-40LT3G

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BC817-40LT3G - Onsemi
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Краткое описание: NPN BJT Transistor 45V 500mA 100MHz SOT-23
Производитель Onsemi
Статус производства Производится (ACTIVE)

Дополнительная информация

NPN bipolar junction transistor (BJT) in a SOT-23-3 package, designed for general-purpose applications. Features a maximum collector current of 500mA and a collector-emitter breakdown voltage of 45V. Offers a minimum DC current gain (hFE) of 250 and a transition frequency of 100MHz. Power dissipation is rated at 300mW, with operating temperatures ranging from -55°C to 150°C. This RoHS and Halogen Free component is supplied in tape and reel packaging.
RoHS Compliant
Width 1.3mm
Height 0.94mm
Length 2.9mm
hFE Min 250
Polarity NPN
Frequency 100MHz
Lead Free Lead Free
Packaging Tape and Reel
Halogen Free Halogen Free
Package/Case SOT-23-3
Max Frequency 100MHz
RoHS Compliant Yes
Contact Plating Tin, Matte
Package Quantity 1
Power Dissipation 300mW
Number of Elements 1
Radiation Hardening No
Reach SVHC Compliant No
Transition Frequency 100MHz
Max Breakdown Voltage 45V
Max Collector Current 500mA
Max Power Dissipation 300mW
Gain Bandwidth Product 100MHz
Max Operating Temperature 150°C
Min Operating Temperature -55°C
Emitter Base Voltage (VEBO) 5V
Collector Base Voltage (VCBO) 50V
Collector-emitter Voltage-Max 700mV
Collector Emitter Voltage (VCEO) 45V
Collector Emitter Breakdown Voltage 45V
Collector Emitter Saturation Voltage 700mV

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