BC817K25E6327HTSA1
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NPN BJT Transistor, 45V VCEO, 500mA IC, SOT, 170MHz
Дополнительная информация
NPN silicon bipolar junction transistor (BJT) for surface mount applications. Features a 45V collector-emitter breakdown voltage and 500mA continuous collector current. Operates with a maximum power dissipation of 500mW and a transition frequency of 170MHz. Packaged in a SOT case, this RoHS compliant component offers a wide operating temperature range from -65°C to 150°C.
| RoHS | Compliant |
| Mount | Surface Mount |
| Width | 1.3mm |
| Height | 900um |
| Length | 2.9mm |
| Polarity | NPN |
| Frequency | 170MHz |
| Lead Free | Lead Free |
| Packaging | Tape and Reel |
| Halogen Free | Not Halogen Free |
| Package/Case | SOT |
| Max Frequency | 170MHz |
| RoHS Compliant | Yes |
| Package Quantity | 3000 |
| Power Dissipation | 500mW |
| Number of Elements | 1 |
| Radiation Hardening | No |
| Transition Frequency | 170MHz |
| Element Configuration | Single |
| Max Breakdown Voltage | 45V |
| Max Collector Current | 500mA |
| Max Power Dissipation | 500mW |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -65°C |
| Emitter Base Voltage (VEBO) | 5V |
| Continuous Collector Current | 500mA |
| Collector Base Voltage (VCBO) | 50V |
| Collector-emitter Voltage-Max | 700mV |
| Collector Emitter Voltage (VCEO) | 700mV |
| Collector Emitter Breakdown Voltage | 45V |
| Collector Emitter Saturation Voltage | 700mV |
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